DHH55-36N1F
ns
Sonic Fast Recovery Diode
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
IFSM
IR
A
V
700
IFAV
A
VF
2.04
RthJC
0.60 K/W
VR
=
1800
1
3
5
min.
60
t = 10 ms
(50 Hz), sine
Applications:
VRRM
V
1800
V°C=
25
200
μA
TVJ
TVJ
=mA125
2
°C
Package:
Part number
VR
=
1800
TVJ
=°C25
IF
=A60
V
TC
=
50°C
rectangular 0.5d =
Ptot
210 W
TC
=
25
°C
TVJ
150 °C
-55
VRRM
=
IFAV
=
1800
V
60
A
TVJ
=
45°C
DHH55-36N1F
V
max. repetitive reverse voltage
reverse current
forward voltage
virtual junction temperature
total power dissipation
max. forward surge current
Conditions
Unit
2.57
TVJ
=25
°C
CJ
junction capacitance
V = V; TR
1200 pFf = 1 MHz = °CVJ
25
VF0
V
1.28
TVJ
=
150°C
rF
12
m?
V
2.03
TVJ
=°C125
IF
=A60
V
2.73
IF
=A120
IF
=A120
threshold voltage
slope resistance
for power loss calculation only
Backside: Isolated
60 A
TVJ
=°C25
reverse recovery time
A
70
230
350
ns
trr
=
230 ns
●
Housing:
i4-Pac
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Phase leg
●rDCB isolated backside
●rIsolation Voltage 3000 V
●rEpoxy meets UL 94V-0
●rRoHS compliant
IRM
max. reverse recovery current
IF
=A;60
VR
=V1200
T=VJ
100°C
-diF/dt
=A/μs800
trr
TVJ
=°C25
T=VJ
100°C
28
thermal resistance junction to case
●
Planar passivated chips
●
Very low leakage current
●
Very short recovery time
●
Improved thermal behaviour
●
Very low Irm-values
●
Very soft recovery behaviour
●
Avalanche voltage rated for reliable
operation
●
Soft reverse recovery for low EMI/RFI
●
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutatin
g
switch
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode
●
Rectifiers in switch mode power
supplies (SMPS)
●
Uninterruptible power supplies (UPS)
average forward current
IXYS reserves the right to change limits, conditions and dimensions.
?
2011 IXYS all rights reserved
20110908c
Data according to IEC 60747and per diode unless otherwise specified
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